Fin field-effect transistor

A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure. These devices have been given the generic name "FinFETs" because the source/drain region forms fins on the silicon surface. The FinFET devices have significantly faster switching times and higher current density than planar CMOS (complementary metal–oxide–semiconductor) technology.^[1]

FinFET is a type of non-planar transistor, or "3D" transistor.^[2] It is the basis for modern nanoelectronic semiconductor device fabrication. Microchips utilizing FinFET gates first became commercialized in the first half of the 2010s, and became the dominant gate design at 14 nm, 10 nm and 7 nm process nodes.

It is common for a single FinFET transistor to contain several fins, arranged side by side and all covered by the same gate, that act electrically as one. The number of fins can be varied to adjust drive strength and performance,^[3] with drive strength increasing with a higher number of fins.^[4]