MOSFET

Two power MOSFETs in D2PAK surface-mount packages. Operating as switches, each of these components can sustain a blocking voltage of 120 V in the off state, and can conduct a con­ti­nuous current of 30 A in the on state, dissipating up to about 100 W and controlling a load of over 2000 W. A matchstick is pictured for scale.

In electronics, the metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, MOS FET, or MOS transistor) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The term metal–insulator–semiconductor field-effect transistor (MISFET) is almost synonymous with MOSFET. Another near-synonym is insulated-gate field-effect transistor (IGFET).

Physicist Julius Edgar Lilienfeld first proposed the concept of a field-effect transistor (FET) in 1925, but it was not possible to construct a working device at that time.[1] The first working metal–oxide–semiconductor field-effect transistor (MOSFET) was invented in 1959 by engineers Mohamed Atalla and Dawon Kahng at Bell Labs.[2] Their breakthrough—fabricating a functional FET using the method of thermal oxidation—revolutionized electronics and paved the way for smaller and cheaper radios, calculators, computers, and other electronic devices.[3]

The main advantage of a MOSFET is that it requires almost no input current to control the load current under steady-state or low-frequency conditions, especially compared to bipolar junction transistors (BJTs). However, at high frequencies or when switching rapidly, a MOSFET may require significant current to charge and discharge its gate capacitance. In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.[4]

The "metal" in the name MOSFET is sometimes a misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages.

The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. As MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.

A cross-section through an nMOSFET when the gate voltage VGS is below the threshold for making a conductive channel; there is little or no conduction between the terminals drain and source; the switch is off. When the gate is more positive, it attracts electrons, inducing an n-type conductive channel in the substrate below the oxide (yellow), which allows electrons to flow between the n-doped terminals; the switch is on.
  1. ^ "Patent 272437 Summary". Canadian Patents Database.
  2. ^ "Fathers of the MOSFET: Dawon Kahng and Martin Atalla". All About Circuits.
  3. ^ Kim, Seongjae; Seo, Juhyung; Choi, Junhwan; Yoo, Hocheon (7 October 2022). "Vertically Integrated Electronics: New Opportunities from Emerging Materials and Devices". Nano-Micro Letters. 14 (1) 201. Springer Nature. doi:10.1007/s40820-022-00942-1. eISSN 2150-5551. PMC 9547046.
  4. ^ "D-MOSFET OPERATION AND BIASING" (PDF). Archived (PDF) from the original on 2022-10-22.

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