Metal gate

Aluminum alloying into < 1 1 1 > silicon due to excessive aluminum annealing. The integrated circuit aluminum layer was removed via chemical etching to reveal this detail.

A metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid-1970s, the "M" for metal has been replaced by polysilicon, but the name remained.


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