Semiconductor device fabrication

NASA's Glenn Research Center clean room

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM). It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material. Silicon is almost always used, but various compound semiconductors are used for specialized applications.

The fabrication process is performed in highly specialized semiconductor fabrication plants, also called foundries or "fabs",[1] with the central part being the "clean room". In more advanced semiconductor devices, such as modern 14/10/7 nm nodes, fabrication can take up to 15 weeks, with 11–13 weeks being the industry average.[2] Production in advanced fabrication facilities is completely automated, with automated material handling systems taking care of the transport of wafers from machine to machine.[3]

A wafer often has several integrated circuits which are called dies as they are pieces diced from a single wafer. Individual dies are separated from a finished wafer in a process called die singulation, also called wafer dicing. The dies can then undergo further assembly and packaging.[4]

Within fabrication plants, the wafers are transported inside special sealed plastic boxes called FOUPs.[3] FOUPs in many fabs contain an internal nitrogen atmosphere[5][6] which helps prevent copper from oxidizing on the wafers. Copper is used in modern semiconductors for wiring.[7] The insides of the processing equipment and FOUPs is kept cleaner than the surrounding air in the cleanroom. This internal atmosphere is known as a mini-environment and helps improve yield which is the amount of working devices on a wafer. This mini environment is within an EFEM (equipment front end module)[8] which allows a machine to receive FOUPs, and introduces wafers from the FOUPs into the machine. Additionally many machines also handle wafers in clean nitrogen or vacuum environments to reduce contamination and improve process control.[3] Fabrication plants need large amounts of liquid nitrogen to maintain the atmosphere inside production machinery and FOUPs, which are constantly purged with nitrogen.[5][6] There can also be an air curtain or a mesh[9] between the FOUP and the EFEM which helps reduce the amount of humidity that enters the FOUP and improves yield.[10][11]

Companies that manufacture machines used in the industrial semiconductor fabrication process include ASML, Applied Materials, Tokyo Electron and Lam Research.

  1. ^ Cite error: The named reference berlin-regression-methods was invoked but never defined (see the help page).
  2. ^ "8 Things You Should Know About Water & Semiconductors". China Water Risk. 11 July 2013. Retrieved 2023-01-21.
  3. ^ a b c Yoshio, Nishi (2017). Handbook of Semiconductor Manufacturing Technology. CRC Press.
  4. ^ Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06). "Die singulation technologies for advanced packaging: A critical review". Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30 (4): 040801. Bibcode:2012JVSTB..30d0801L. doi:10.1116/1.3700230. ISSN 2166-2746.
  5. ^ a b Wang, H. P.; Kim, S. C.; Liu, B. (2014). Advanced FOUP purge using diffusers for FOUP door-off application. 25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014). pp. 120–124. doi:10.1109/ASMC.2014.6846999. ISBN 978-1-4799-3944-2. S2CID 2482339.
  6. ^ a b 450mm FOUP/LPU system in advanced semiconductor manufacturing processes: A study on the minimization of oxygen content inside FOUP when the door is opened. 2015 Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & 2015 International Symposium on Semiconductor Manufacturing (ISSM).
  7. ^ Lin, Tee; Fu, Ben-Ran; Hu, Shih-Cheng; Tang, Yi-Han (2018). "Moisture Prevention in a Pre-Purged Front-Opening Unified Pod (FOUP) During Door Opening in a Mini-Environment". IEEE Transactions on Semiconductor Manufacturing. 31 (1): 108–115. doi:10.1109/TSM.2018.2791985. S2CID 25469704.
  8. ^ Kure, Tokuo; Hanaoka, Hideo; Sugiura, Takumi; Nakagawa, Shinya (2007). "Clean-room Technologies for the Mini-environment Age" (PDF). Hitachi Review. 56 (3): 70–74. CiteSeerX 10.1.1.493.1460. S2CID 30883737. Archived (PDF) from the original on 2021-11-01. Retrieved 2021-11-01.
  9. ^ Kim, Seong Chan; Schelske, Greg (2016). FOUP purge performance improvement using EFEM flow converter. 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). pp. 6–11. doi:10.1109/ASMC.2016.7491075. ISBN 978-1-5090-0270-2. S2CID 3240442.
  10. ^ Benalcazar, David; Lin, Tee; Hu, Ming-Hsuan; Ali Zargar, Omid; Lin, Shao-Yu; Shih, Yang-Cheng; Leggett, Graham (2022). "A Numerical Study on the Effects of Purge and Air Curtain Flow Rates on Humidity Invasion Into a Front Opening Unified Pod (FOUP)". IEEE Transactions on Semiconductor Manufacturing. 35 (4): 670–679. doi:10.1109/TSM.2022.3209221. S2CID 252555815.
  11. ^ Lin, Tee; Ali Zargar, Omid; Juina, Oscar; Lee, Tzu-Chieh; Sabusap, Dexter Lyndon; Hu, Shih-Cheng; Leggett, Graham (2020). "Performance of Different Front-Opening Unified Pod (FOUP) Moisture Removal Techniques With Local Exhaust Ventilation System". IEEE Transactions on Semiconductor Manufacturing. 33 (2): 310–315. doi:10.1109/TSM.2020.2977122. S2CID 213026336.

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