Back مقوم سيليكوني متحكم به Arabic İdarəolunan silikon düzləndirici Azerbaijani Thyristor#Geschichte German Rectificador controlado de silicio Spanish یکسوساز کنترل شده سیلیکونی Persian सिलिकॉन कन्ट्रोल्ड रेक्टिफायर Hindi Penyearah terkendali silikon ID സിലിക്കൺ കണ്ട്രോൾഡ് റെക്ടിഫയർ Malayalam စီလီကွန် ကွန်ထရိုး ရက်တီဖိုင်ယာ Burmese Retificador controlado de silício Portuguese
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 Silicon controlled rectifier | |
| Type | Active |
|---|---|
| Working principle | Ian M. Mackintosh (Bell Laboratories) |
| Invented | Gordon Hall and Frank W. "Bill" Gutzwiller |
| First production | General Electric, 1957 |
| Pin configuration | Anode, gate and cathode |
| Electronic symbol | |
 | |
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956.[1] The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958.[2][3] The SCR was developed by a team of power engineers led by Gordon Hall [4] [5] [6] [7] and commercialized by Frank W. "Bill" Gutzwiller in 1957.
Some sources define silicon-controlled rectifiers and thyristors as synonymous[8] while other sources define silicon-controlled rectifiers as a proper subset of the set of thyristors; the latter being devices with at least four layers of alternating n- and p-type material.[9][10] According to Bill Gutzwiller, the terms "SCR" and "controlled rectifier" were earlier, and "thyristor" was applied later, as usage of the device spread internationally.[11]
SCRs are unidirectional devices (i.e. can conduct current only in one direction) as opposed to TRIACs, which are bidirectional (i.e. charge carriers can flow through them in either direction). SCRs can be triggered normally only by a positive current going into the gate as opposed to TRIACs, which can be triggered normally by either a positive or a negative current applied to its gate electrode.
- ^ Moll, J.; Tanenbaum, M.; Goldey, J.; Holonyak, N. (September 1956). "P-N-P-N Transistor Switches". Proceedings of the IRE. 44 (9): 1174–1182. doi:10.1109/jrproc.1956.275172. ISSN 0096-8390. S2CID 51673404.
- ^ Vasseur, J. P. (2016-06-06). Properties and Applications of Transistors. Elsevier. ISBN 9781483138886.
- ^ Twist, Jo (2005-04-18). "Law that has driven digital life". BBC News. Retrieved 2018-07-27.
- ^ Ward, Jack. "The Early History of the Silicon Controlled Rectifier". p. 6. Retrieved 12 April 2014.
- ^ "Semiconductors: Thyristors and more". Edison Tech Center.
- ^ "SCR is 50 Years Old" (PDF). IEEE Industry Applications Magazine.
- ^ Mungenast, J. E. "The SCR Revolution". RF Cafe. General Electric Co.
- ^ Christiansen, Donald; Alexander, Charles; Jurgen, Ronald (2005). Standard Handbook of Electronic Engineering, 5th Edition. Mcgraw-hill. ISBN 9780071384216.
- ^ International Electrotechnical Commission 60747-6 standard
- ^ Dorf, Richard C. (1997-09-26). The Electrical Engineering Handbook, Second Edition. CRC Press. ISBN 9781420049763.
- ^ Ward, Jack. "The Early History of the Silicon Controlled Rectifier". p. 7. Retrieved 12 April 2014.
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