International Technology Roadmap for Semiconductors

Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977  1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The International Technology Roadmap for Semiconductors (ITRS) is a set of documents that was coordinated and organized by Semiconductor Research Corporation^[1] and produced by a group of experts in the semiconductor industry. These experts were representative of the sponsoring organisations, including the Semiconductor Industry Associations of Taiwan, South Korea, the United States, Europe, Japan, and China.

As of 2017, ITRS is no longer being updated. Its successor is the International Roadmap for Devices and Systems.

The documents carried disclaimer: "The ITRS is devised and intended for technology assessment only and is without regard to any commercial considerations pertaining to individual products or equipment".

The documents represent best opinion on the directions of research and time-lines up to about 15 years into the future for the following areas of technology: