Lely method

Crystallization
Fundamentals
Crystal Crystal structure Nucleation
Concepts
Crystallization Crystal growth Recrystallization Seed crystal Protocrystalline Single crystal
Methods and technology
Boules Bridgman–Stockbarger method Van Arkel–de Boer process Czochralski method Epitaxy Flux method Fractional crystallization Fractional freezing Hydrothermal synthesis Kyropoulos method Laser-heated pedestal growth Lely method Micro-pulling-down Shaping processes in crystal growth Skull crucible Verneuil method Zone melting
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The Lely method, also known as the Lely process or Lely technique, is a crystal growth technology used for producing silicon carbide crystals for the semiconductor industry. The patent for this method was filed in the Netherlands in 1954 and in the United States in 1955 by Jan Anthony Lely of Philips Electronics.^[1] The patent was subsequently granted on 30 September 1958, then was refined by D. R. Hamilton et al. in 1960, and by V. P. Novikov and V. I. Ionov in 1968.^[2]