Molybdenum ditelluride

Molybdenum ditelluride
Names
	IUPAC name bis(tellanylidene)molybdenum
	Other names molybdenum(IV) telluride
Identifiers
CAS Number	12058-20-7 ;
3D model (JSmol)	Interactive image;
ChemSpider	58270 ;
ECHA InfoCard	100.031.832
EC Number	235-028-4;
PubChem CID	64728;
CompTox Dashboard (EPA)	DTXSID9065235 ;
	InChI InChI=1Te/Mo.2Te ; InChI=1/Mo.2Te/rMoS2/c2-1-3 Key: HITXEXPSQXNMAN-UHFFFAOYSA-N;
	SMILES [Te]=[Mo]=[Te];
Properties
Chemical formula	MoTe; 2
Molar mass	351.14 g/mol
Appearance	black/lead-gray solid
Density	7.7 g/cm3
Melting point	decomposes
Solubility in water	insoluble
Solubility	decomposed by nitric acid ; insoluble in non-oxidising acids
Band gap	1.1 eV (direct, monolayer); 0.9 eV (indirect, bulk)
Structure
Crystal structure	hP6, P63/mmc, No. 194 (α or 2H); mP12, P21/m, No. 11 (β or 1T)
Related compounds
Other anions	molybdenum(IV) oxide molybdenum disulfide molybdenum diselenide
Other cations	tungsten ditelluride
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). (what is ?) Infobox references

Molybdenum(IV) telluride, molybdenum ditelluride or just molybdenum telluride is a compound of molybdenum and tellurium with formula MoTe₂, corresponding to a mass percentage of 27.32% molybdenum and 72.68% tellurium.

It can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition metal dichalcogenides. As a semiconductor the band gap lies in the infrared region. This raises the potential use as a semiconductor in electronics or an infrared detector.^[4]

^ ^a ^b Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.76. ISBN 1-4398-5511-0.
^ ^a ^b Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. (12 November 2014). "Optical Properties and Band Gap of Single- and Few-Layer MoTe₂ Crystals". Nano Letters. 14 (11): 6231–6236. Bibcode:2014NanoL..14.6231R. doi:10.1021/nl502557g. PMID 25302768.
^ Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX₂ semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.
^ Cite error: The named reference Zyga15 was invoked but never defined (see the help page).

[b92-1] Haynes, William M., ed. (2011). CRC Handbook of Chemistry and Physics (92nd ed.). Boca Raton, FL: CRC Press. p. 4.76. ISBN 1-4398-5511-0.

[Ruppert-2] Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. (12 November 2014). "Optical Properties and Band Gap of Single- and Few-Layer MoTe₂ Crystals". Nano Letters. 14 (11): 6231–6236. Bibcode:2014NanoL..14.6231R. doi:10.1021/nl502557g. PMID 25302768.

[3] Yun, Won Seok; Han, S. W.; Hong, Soon Cheol; Kim, In Gee; Lee, J. D. (2012). "Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX₂ semiconductors (M = Mo, W; X = S, Se, Te)". Physical Review B. 85 (3): 033305. Bibcode:2012PhRvB..85c3305Y. doi:10.1103/PhysRevB.85.033305.

[Zyga15-4] Cite error: The named reference Zyga15 was invoked but never defined (see the help page).

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