RF CMOS

RF CMOS is a metal–oxide–semiconductor (MOS) integrated circuit (IC) technology that integrates radio-frequency (RF), analog and digital electronics on a mixed-signal CMOS (complementary MOS) RF circuit chip.^[1]^[2] It is widely used in modern wireless telecommunications, such as cellular networks, Bluetooth, Wi-Fi, GPS receivers, broadcasting, vehicular communication systems, and the radio transceivers in all modern mobile phones and wireless networking devices. RF CMOS technology was pioneered by Pakistani engineer Asad Ali Abidi at UCLA during the late 1980s to early 1990s, and helped bring about the wireless revolution with the introduction of digital signal processing in wireless communications. The development and design of RF CMOS devices was enabled by van der Ziel's FET RF noise model, which was published in the early 1960s and remained largely forgotten until the 1990s.^[3]^[4] ^[5]^[6]

^ "Figure 1 Summary of SiGe BiCMOS and rf CMOS technology". ResearchGate. Retrieved 2019-12-07.
^ RF CMOS Power Amplifiers: Theory, Design and Implementation. The International Series in Engineering and Computer Science. Vol. 659. Springer Science+Business Media. 2002. doi:10.1007/b117692. ISBN 0-7923-7628-5.
^ A. van der Ziel (1962). "Thermal noise in field effect transistors". Proceedings of the IRE. 50 (8): 1808–1812. doi:10.1109/JRPROC.1962.288221.
^ A. van der Ziel (1963). "Gate noise in field effect transistors at moderately high frequencies". Proceedings of the IEEE. 51 (3): 461–467. doi:10.1109/PROC.1963.1849.
^ A. van der Ziel (1986). Noise in Solid State Devices and Circuits. Wiley-Interscience.
^ T.M. Lee (2007). "The history and future of RF CMOS: From oxymoron to mainstream" (PDF). IEEE Int. Conf. Computer Design.