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Names | |
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IUPAC name
Scandium nitride
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Other names
Azanylidynescandium
Nitridoscandium | |
Identifiers | |
3D model (JSmol)
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ChemSpider | |
ECHA InfoCard | 100.042.938 |
EC Number |
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PubChem CID
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CompTox Dashboard (EPA)
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Properties | |
ScN | |
Molar mass | 58.963 |
Density | 4.4 g/cm3 |
Melting point | 2,600 °C (4,710 °F; 2,870 K) |
Hazards | |
GHS labelling: | |
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Danger | |
H228 | |
Related compounds | |
Other anions
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Scandium phosphide Scandium arsenide Scandium antimonide Scandium bismuthide |
Other cations
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Yttrium nitride Lutetium nitride |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Scandium nitride (ScN) is a binary III-V indirect bandgap semiconductor. It is composed of the scandium cation and the nitride anion. It forms crystals that can be grown on tungsten foil through sublimation and recondensation.[1] It has a rock-salt crystal structure with lattice constant of 0.451 nanometer, an indirect bandgap of 0.9 eV and direct bandgap of 2 to 2.4 eV.[1][2] These crystals can be synthesized by dissolving nitrogen gas with indium-scandium melts, magnetron sputtering, MBE, HVPE and other deposition methods.[2][3] Scandium nitride is also an effective gate for semiconductors on a silicon dioxide (SiO2) or hafnium dioxide (HfO2) substrate.[4]
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