32 nm process

Semiconductor device fabrication
MOSFET scaling (process nodes)
020 µm – 1968 010 µm – 1971 006 µm – 1974 003 µm – 1977  1.5 µm – 1981 001 µm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Device (multi-gate) Moore's law Transistor count Semiconductor Industry Nanoelectronics
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The "32 nm" node is the step following the "45 nm" process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level.

Toshiba produced commercial 32 GiB NAND flash memory chips with the "32 nm" process in 2009.^[1] Intel and AMD produced commercial microchips using the "32 nm" process in the early 2010s. IBM and the Common Platform also developed a "32 nm" high-κ metal gate process.^[2] Intel began selling its first "32 nm" processors using the Westmere architecture on 7 January 2010.

Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit;^[3] neither gate length, nor metal pitch, nor gate pitch on a "32nm" device is thirty-two nanometers.^[4][5][6][7]

The "28 nm" node is an intermediate half-node die shrink based on the "32 nm" process.

The "32 nm" process was superseded by commercial "22 nm" technology in 2012.^[8][9]